Photothermal modulation spectroscopy of multilayered structures of amorphous silicon and amorphous silicon carbide

Multilayered Amorphous Silicon Structures

Mechanical Properties of Amorphous Silicon Carbide

Excellent physical and chemical properties make silicon carbide (SiC) a prominent candidate for a variety of applications, including high-temperature, high-power, and high-frequency and optoelectronic devices, structural component in fusion reactors, cladding material for gas-cooled fission reactors, and an inert matrix for the transmutation of Pu(Katoh, Y. et al., 2007; Snead, L. L. et al., 20...

Amorphous Silicon Carbide for Photovoltaic Applications

Dissertation zur Erlangung des akademischen Grades Doktor der Naturwissenschaften Introduction Figure 1.1: One possible amorphous silicon (white) and carbon (black) network with incorporated hydrogen (small black dots) a-SiC:H. 20 Figure 1.2: Fourier transformed infrared (FTIR) absorption spectra for a typical stoichiometric SiC layer as deposited at 350°C. 21 Figure 1.3: Auger electron spectro...

Infrared modulation spectroscopy of interfaces in amorphous silicon solar cells

We report infrared depletion modulation spectra for near-interface states in a-Si pin solar cells. The effect of additional visible illumination (optical bias) was explored as a means to separate the spectra for n/i and p/i interface states. We found a sharp, optical bias-induced spectral line near 0.8 eV. We attribute this line due to internal optical transitions of dopant-defect complexes in ...

Atomistic processes during nanoindentation of amorphous silicon carbide

Atomistic mechanisms of nanoindentation of a-SiC have been studied by molecular dynamics simulations. The load displacement curve exhibits a series of load drops, reflecting the short-range topological order similar to crystalline 3C–SiC. In contrast to 3C–SiC, the load drops are irregularly spaced and less pronounced. The damage is spatially more extended than in 3C–SiC, and it exhibits long-r...